Standard Test Method for Characterizing Semiconductor Deep Levels by Transient Capacitance Techniques (Withdrawn 2003)
NORM herausgegeben am 10.1.2001
Designation standards: ASTM F978-02
Note: UNGÜLTIG
Publication date standards: 10.1.2001
The number of pages: 8
Approximate weight : 24 g (0.05 lbs)
Country: American technical standard
Kategorie: Technische Normen ASTM
Keywords:
activation energy, deep levels, DLTS, semiconductor silicon, trap density, transient capacitance, ICS Number Code 29.045 (Semiconducting materials)